arsenic ion implantation

імплантація іонів миш’яку

English-Ukrainian dictionary of microelectronics. 2013.

Смотреть что такое "arsenic ion implantation" в других словарях:

  • Ion implantation — is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as… …   Wikipedia

  • Implantation ionique — L implantation ionique est un procédé d ingénierie des matériaux. Comme son nom l indique, il est utilisé pour implanter les ions d un matériau dans un autre solide, changeant de ce fait les propriétés physiques de ce solide. L implantation… …   Wikipédia en Français

  • Doping (semiconductor) — In semiconductor production, doping intentionally introduces impurities into an extremely pure (also referred to as intrinsic) semiconductor for the purpose of modulating its electrical properties. The impurities are dependent upon the type of… …   Wikipedia

  • Radioactive waste — 2007 ISO radioactivity danger logo, designed in part for long term radioactive waste depositories which might survive into a far future time in which all knowledge of the meaning of present common radiation danger symbols and signs has been lost… …   Wikipedia

  • Boron — (pronEng|ˈbɔərɒn) is a chemical element with atomic number 5 and the chemical symbol B. Boron is a trivalent nonmetallic element which occurs abundantly in the evaporite ores borax and ulexite. Boron is never found as a free element on… …   Wikipedia

  • Dopant — This article is about elemental impurities. For the fictional characters in Kamen Rider W, see Dopant (Kamen Rider). A dopant, also called a doping agent, is a trace impurity element that is inserted into a substance (in very low concentrations)… …   Wikipedia

  • Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 …   Wikipedia

  • Dopant Activation — is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host.[1] The term is often restricted to the application of thermal energy following the ion implantation of dopants. In the most common… …   Wikipedia

  • Wafer (electronics) — Polished 12 and 6 silicon wafers. The flat cut into the right wafer indicates its doping and crystallographic orientation (see below) …   Wikipedia

  • Ohmic contact — An ohmic contact is a region on a semiconductor device that has been prepared so that the current voltage (I V) curve of the device is linear and symmetric. If the I V characteristic is non linear and asymmetric, the contact is not ohmic, but is… …   Wikipedia

  • CADMIUM — Le cadmium est un métal blanc argent, légèrement bleuté. Il est très malléable et ductile. Son abondance dans la lithosphère est estimée à 0,15 g/t, c’est donc un métal relativement rare. Il n’existe pas de minerais de cadmium en quantités… …   Encyclopédie Universelle

Поделиться ссылкой на выделенное

Прямая ссылка:
Нажмите правой клавишей мыши и выберите «Копировать ссылку»

We are using cookies for the best presentation of our site. Continuing to use this site, you agree with this.